Luminiscenční spektroskopie dvojdimenzionálních kvantových struktur v systému GaAs/AlGaAs

Grohoľová, Adela

Luminescence spectroscopy of two-dimensional quantum structures in GaAs/AlGaAs system

dc.contributor.advisor	Grill, Roman
dc.creator	Grohoľová, Adela
dc.date.accessioned	2017-03-30T17:05:05Z
dc.date.available	2017-03-30T17:05:05Z
dc.date.issued	2006
dc.identifier.uri	http://hdl.handle.net/20.500.11956/7697
dc.description.abstract	The aim of this work is the study of photoluminescence properties of GaAs/Al0.33Ga0.67As double quantum well. Low-temperature luminescence spectra of this sample are measured in dependence on electric and magnetic eld and dierent excitation power. The temperature dependencies of photoluminescence especially of the indirect excitons in in-plane magnetic eld are gauged as well. The simple model of localized indirect excitons is discussed to explain the discrepancy concerning the damping of indirect exciton photoluminescence in in-plane magnetic eld. The eective g-factors of indirect, neutral and charged excitons are calculated from observed Zeeman splitting. Few simple models are proposed to explain the behavior of eective g-factors. The possible agreement or contradiction with other published experimental data is discussed.	en_US
dc.language	Čeština	cs_CZ
dc.language.iso	cs_CZ
dc.publisher	Univerzita Karlova, Matematicko-fyzikální fakulta	cs_CZ
dc.title	Luminiscenční spektroskopie dvojdimenzionálních kvantových struktur v systému GaAs/AlGaAs	cs_CZ
dc.type	diplomová práce	cs_CZ
dcterms.created	2006
dcterms.dateAccepted	2006-09-11
dc.description.department	Fyzikální ústav UK	cs_CZ
dc.description.department	Institute of Physics of Charles University	en_US
dc.description.faculty	Faculty of Mathematics and Physics	en_US
dc.description.faculty	Matematicko-fyzikální fakulta	cs_CZ
dc.identifier.repId	42023
dc.title.translated	Luminescence spectroscopy of two-dimensional quantum structures in GaAs/AlGaAs system	en_US
dc.contributor.referee	Oswald, Jiří
dc.identifier.aleph	000844861
thesis.degree.name	Mgr.
thesis.degree.level	magisterské	cs_CZ
thesis.degree.discipline	Optics and optoelectronics	en_US
thesis.degree.discipline	Optika a optoelektronika	cs_CZ
thesis.degree.program	Physics	en_US
thesis.degree.program	Fyzika	cs_CZ
uk.thesis.type	diplomová práce	cs_CZ
uk.taxonomy.organization-cs	Matematicko-fyzikální fakulta::Fyzikální ústav UK	cs_CZ
uk.taxonomy.organization-en	Faculty of Mathematics and Physics::Institute of Physics of Charles University	en_US
uk.faculty-name.cs	Matematicko-fyzikální fakulta	cs_CZ
uk.faculty-name.en	Faculty of Mathematics and Physics	en_US
uk.faculty-abbr.cs	MFF	cs_CZ
uk.degree-discipline.cs	Optika a optoelektronika	cs_CZ
uk.degree-discipline.en	Optics and optoelectronics	en_US
uk.degree-program.cs	Fyzika	cs_CZ
uk.degree-program.en	Physics	en_US
thesis.grade.cs	Výborně	cs_CZ
thesis.grade.en	Excellent	en_US
uk.abstract.en	The aim of this work is the study of photoluminescence properties of GaAs/Al0.33Ga0.67As double quantum well. Low-temperature luminescence spectra of this sample are measured in dependence on electric and magnetic eld and dierent excitation power. The temperature dependencies of photoluminescence especially of the indirect excitons in in-plane magnetic eld are gauged as well. The simple model of localized indirect excitons is discussed to explain the discrepancy concerning the damping of indirect exciton photoluminescence in in-plane magnetic eld. The eective g-factors of indirect, neutral and charged excitons are calculated from observed Zeeman splitting. Few simple models are proposed to explain the behavior of eective g-factors. The possible agreement or contradiction with other published experimental data is discussed.	en_US
uk.file-availability	V
uk.publication.place	Praha	cs_CZ
uk.grantor	Univerzita Karlova, Matematicko-fyzikální fakulta, Fyzikální ústav UK	cs_CZ
dc.identifier.lisID	990008448610106986