Luminiscenční spektroskopie dvojdimenzionálních kvantových struktur v systému GaAs/AlGaAs

Abstract

The aim of this work is the study of photoluminescence properties of GaAs/Al0.33Ga0.67As double quantum well. Low-temperature luminescence spectra of this sample are measured in dependence on electric and magnetic eld and dierent excitation power. The temperature dependencies of photoluminescence especially of the indirect excitons in in-plane magnetic eld are gauged as well. The simple model of localized indirect excitons is discussed to explain the discrepancy concerning the damping of indirect exciton photoluminescence in in-plane magnetic eld. The eective g-factors of indirect, neutral and charged excitons are calculated from observed Zeeman splitting. Few simple models are proposed to explain the behavior of eective g-factors. The possible agreement or contradiction with other published experimental data is discussed.